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Improved UV photodetector performance of NiO films by substitutional incorporation of Li
- Yadav, P.V.K.;
- Ajitha, B.;
- Annapureddy, V.;
- Reddy, Y.A.K.;
- Sreedhar, A.
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23초록
In this study, NiO and Li0.2Ni0.8O (LNO) thin films are successfully deposited by sputtering technique. X-ray photoelectron spectroscopy (XPS) analysis revealed the existence of Ni vacancies. Here, we fabricated metal-semiconductor-metal (M-S-M) structure for exploring the ultra-violet (UV) photodetector (PD) performance. The impact of interstitial oxygen and substitutional incorporation of monovalent Li+ ion in Ni2+ sites of NiO on UV photodetector performance are explored. In a word, LNO exhibited superior responsivity (0.218 A/W) and detectivity (0.467 × 1012 Jones) even at lower power density of 0.31 mW/cm2. © 2021 Elsevier B.V.
키워드
Detectivity; Li incorporation; NiO; Photodetector; Responsivity; Lithium; Photodetectors; Photoelectrons; Photons; X ray photoelectron spectroscopy; Detectivity; Li incorporation; Li$++$; NiO films; Performance; Photodetector; Responsivity; Substitutional incorporation; Thin-films; Ultra-violet photodetectors; Nickel oxide
- 제목
- Improved UV photodetector performance of NiO films by substitutional incorporation of Li
- 저자
- Yadav, P.V.K.; Ajitha, B.; Annapureddy, V.; Reddy, Y.A.K.; Sreedhar, A.
- 발행일
- 2021-10-15
- 유형
- Article
- 권
- 301
- 언어
- ENG
- 출판사
- ELSEVIER
- 발행국가
- 네덜란드
- ISSN
- E 1873-4979
P 0167-577X