Multi- and All-Acceptor Polymers for High-Performance n-Type Polymer Field Effect Transistors

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초록

Multi-acceptor and all-acceptor polymers solve the fundamental challenge of achieving unipolar electron transport without compromising stability in n-type polymer field-effect transistors. By systematically replacing electron-rich donors with acceptor units, these architectures push LUMO levels below -4.0 eV and HOMO levels below -5.7 eV. Consequently, electron mobilities exceeding 7 cm2 V-1 s-1, on/off ratios approaching 107, and months-long ambient operation can be achieved. This review connects the molecular architecture to device function. We assert that short-range pi-aggregation matters more than crystallinity-tight pi-stacking over 5-10 molecules drives transport in rigid backbones. Device optimization through interface engineering (e.g., amine-functionalized self-assembled monolayers reduce the threshold voltages to 1-5 V), contact resistance minimization, and controlled processing transform the intrinsic material potential into working transistors. Current challenges, such as balancing the operating voltage against stability, scaling synthetic yields, and reducing contact resistance, define near-term research directions toward complementary circuits, thermoelectrics, and bioelectronics.

키워드

n-type polymersmulti-acceptor strategyfrontier molecular orbitalselectron mobilitypolymer field effect transistorsDIRECT ARYLATION POLYCONDENSATIONSTRUCTURE-PROPERTY CORRELATIONSHIGH-ELECTRON-MOBILITYORGANIC SEMICONDUCTORSCHARGE-TRANSPORTMORPHOLOGYDISORDER
제목
Multi- and All-Acceptor Polymers for High-Performance n-Type Polymer Field Effect Transistors
저자
Bharathi, GanapathiHong, Seongin
DOI
10.3390/polym18010080
발행일
2025-12
유형
Review
저널명
Polymers
18
1