A 48-Gb/s PAM-4 Transceiver With Transition Boosting and RLM Calibration for Next-Generation Memory Interface Testing

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초록

As the demand for high-speed memory interfaces continues to grow, the need for effective testing methodologies becomes increasingly critical. Traditional automatic test equipment (ATE) systems are limited in their capability to test advanced signaling methods such as pulse amplitude modulation-4 (PAM-4) due to their reliance on non-return-to-zero (NRZ) signaling. This article presents a PAM-4 transceiver designed to bridge the gap between the tester and the memory, boosting the PAM-4 testing data rate up to 48 Gb/s using existing NRZ-based ATE. The proposed work provides enhanced transition slope and ratio level mismatch (RLM) control through precise gate voltage adjustment, resulting in improved test accuracy. The prototype was fabricated in 40-nm CMOS technology and occupies an active area of 2.34 mm(2). The proposed work operates at 48 Gb/s/pin, demonstrating an energy efficiency of 1.85 pJ/bit in write mode and 2.97 pJ/bit in read mode for the PAM-4 test, respectively.

키워드

ChatbotsTestingCalibrationOptical signal processingLogic gatesImpedanceLogicVoltage controlTransceiversRandom access memoryEqualizereye-opening monitor (EOM)memory testerPAM-4 transceiverratio level mismatch (RLM)RECEIVERDFE
제목
A 48-Gb/s PAM-4 Transceiver With Transition Boosting and RLM Calibration for Next-Generation Memory Interface Testing
저자
Kye, Chan-HoYun, DaehoHan, JeonghyeonPark, MinsuKim, KahyunBaek, KyungminLee, EonhuiChoi, Woo-SeokJeong, Deog-KyoonRhee, Jooyeol
DOI
10.1109/TVLSI.2025.3647067
발행일
2026-01
유형
Article; Early Access
저널명
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
34
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