Exceptionally linear and highly sensitive photo-induced unipolar inverter device

Naqi, M.; Lee, Ji Ye; Lee, Byeong Hyeon; Kim, Sunkook; Lee, Sang Yeol; Yoo, Hocheon

doi:10.1109/JEDS.2020.3048725

상세 보기

Exceptionally linear and highly sensitive photo-induced unipolar inverter device

Naqi, M.;
Lee, Ji Ye;
Lee, Byeong Hyeon;
Kim, Sunkook;
Lee, Sang Yeol;
... Yoo, Hocheon

Citations

WEB OF SCIENCE

4

Citations

SCOPUS

4

초록

Oxide semiconductors are of particular interest in the field of integrated electronics due to their large-area fabrication, high uniformity, and superior performance. Here, we report an exceptionally sensitive photo-induced inverter device with high linearity based on the unipolar n-type channel material amorphous silicon indium zinc oxide (a-SIZO). The field-effect transistor (FET) based on a-SIZO exhibits maximum mobility of 9.8 cm2/Vs at VD of 5 V, high on/off ratio of 106, and stable threshold voltage (VTh) of -0.35 V. Additionally, the optical properties of the proposed FET include excellent VTh shift and photocurrent (Iphoto) with high linearity under various red-light illumination. The proposed enhancement-load type inverter device shows reliable electrical and optical characteristics with an inverter gain of 0.7 at VDD of 1 V and linear photo-response in terms of inverter gain and voltage shift, demonstrating promising potential in the field of integrated electronics for optoelectronic applications. CCBY

키워드

amorphous silicon indium zinc oxide (a-SIZO); Electrodes; Field effect transistors; field-effect transistor (FET); Inverters; Logic gates; Optical variables measurement; photo-induced inverter.; phototransistor; Phototransistors; Semiconductor device measurement; Unipolar inverter; Amorphous silicon; Binary alloys; Field effect transistors; II-VI semiconductors; Image enhancement; Indium compounds; Optical properties; Oxide semiconductors; Photocurrents; Silicon compounds; Thorium alloys; Threshold voltage; Zinc oxide; Channel materials; High linearity; High uniformity; Indium zinc oxides; Integrated electronics; Optical characteristics; Optoelectronic applications; Photoresponses; Electric inverters

제목: Exceptionally linear and highly sensitive photo-induced unipolar inverter device

저자: Naqi, M.; Lee, Ji Ye; Lee, Byeong Hyeon; Kim, Sunkook; Lee, Sang Yeol; Yoo, Hocheon

DOI: 10.1109/JEDS.2020.3048725

발행일: 2021-01

유형: Article

저널명: IEEE Journal of the Electron Devices Society

권: 9

페이지: 180 ~ 186