Layer Thickness Dependency of Oxide-Metal-Oxide Electrode on the Electrical Performance of Oxide Thin Film Transistors

초록

Transparent oxide-metal-oxide (OMO) of SiInZnO/Ag/SiInZnO (SAS) electrodes have been used for source and drain (S/D) electrodes to process transparent thin film transistors (TFTs) with high performance. Amorphous oxide semiconducting Si-In-Zn-O (SIZO) has been used as a fully transparent channel layer with OMO electrodes with different layer thickness. Layer thickness dependency of the electrical performance of TFTs using SIZO containing 1 wt% Si (1SIZO) TFT has been investigated and analyzed. The electrical performance and the optical properties between different thickness OMO electrodes have been compared and optimized.

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