Radial heterostructure and interface effects on thermoelectric transport properties of Bi/Sn and Bi/Sb core/shell nanowires

  • Moon, Hongjae; 
  • Kim, Jeongmin; 
  • Chun, Dong Won; 
  • Hong, Seokkyoon; 
  • Yoon, Young Soo; 
  • 외 1명
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초록

The thermoelectric transport properties of Bi/Sn and Bi/Sb core/shell (C/S) nanowires grown by the method of on-film formation of nanowires were systematically investigated. The electrical conductivity and Seebeck coefficient of nanowires with different diameters were measured as a function of the temperature. The contribution of Sn and Sb shells to the total transport in the C/S nanowires was determined using analytical fitting based on the parallel combination of the conducive system model. The carrier-interface boundary scattering at the C/S interface was quantitatively evaluated as the sheet resistance. In addition, the effect of hole doping on the transport properties was also observed in the Bi/Sn C/S nanowires.

키워드

Core/shell nanowires; On-film formation of nanowires; Heterostructure; Interface; Thermoelectric; Seebeck coefficient; FIGURE-OF-MERITS; THERMAL-CONDUCTIVITY; ELECTRICAL-RESISTIVITY; POWER FACTOR; SILICON; BISMUTH; REDUCTION; STRAIN
제목
Radial heterostructure and interface effects on thermoelectric transport properties of Bi/Sn and Bi/Sb core/shell nanowires
저자
Moon, Hongjae; Kim, Jeongmin; Chun, Dong Won; Hong, Seokkyoon; Yoon, Young Soo; Lee, Wooyoung
DOI
10.1016/j.cap.2019.10.007
발행일
2020-01
유형
Article
저널명
Current Applied Physics
권
20
호
1
페이지
43 ~ 48