Unified Compact Model for Thin-Film Heterojunction Anti-Ambipolar Transistors

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초록

This letter proposes an advanced compact model for anti-ambipolar transistors based on a lateral thin-film material heterojunction. The modeling idea focuses on an analytical description of component currents and bridging methods necessary for controllable transition between operation regimes. The model is validated by experimental data, and predictive simulations are carried out to demonstrate its applicabilities. IEEE

키워드

Analytical modelsanti-ambipolar transistorsCompact modelingHeterojunctionsinterface phenomenaLogic gatesMathematical modelp-n heterojunctionPredictive modelsthin-film electronicsTransistorsVoltage measurementHeterojunctionsThin filmsAmbipolar transistorsAnalytical descriptionBridging methodsCompact modelOperation regimePredictive simulationsThin film materialUnified compact modelThin film circuits
제목
Unified Compact Model for Thin-Film Heterojunction Anti-Ambipolar Transistors
저자
Yoo, HocheonKim, Chang-Hyun
DOI
10.1109/LED.2021.3102219
발행일
2021-09
유형
Article in Press
저널명
IEEE Electron Device Letters
42
9
페이지
1323 ~ 1326