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Unified Compact Model for Thin-Film Heterojunction Anti-Ambipolar Transistors
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22초록
This letter proposes an advanced compact model for anti-ambipolar transistors based on a lateral thin-film material heterojunction. The modeling idea focuses on an analytical description of component currents and bridging methods necessary for controllable transition between operation regimes. The model is validated by experimental data, and predictive simulations are carried out to demonstrate its applicabilities. IEEE
키워드
Analytical models; anti-ambipolar transistors; Compact modeling; Heterojunctions; interface phenomena; Logic gates; Mathematical model; p-n heterojunction; Predictive models; thin-film electronics; Transistors; Voltage measurement; Heterojunctions; Thin films; Ambipolar transistors; Analytical description; Bridging methods; Compact model; Operation regime; Predictive simulations; Thin film material; Unified compact model; Thin film circuits
- 제목
- Unified Compact Model for Thin-Film Heterojunction Anti-Ambipolar Transistors
- 저자
- Yoo, Hocheon; Kim, Chang-Hyun
- 발행일
- 2021-09
- 유형
- Article in Press
- 권
- 42
- 호
- 9
- 페이지
- 1323 ~ 1326
- 언어
- ENG
- 출판사
- Institute of Electrical and Electronics Engineers Inc.
- 발행국가
- 미국
- 분량
- 4 페이지
- ISSN
- E 1558-0563
P 0741-3106