Pre-State-Dependent Ternary/Binary Logic Operation Obtained by Inkjet Printed Indium Oxide and Single-Walled Carbon Nanotube/Indium Oxide Heterojunction-Based Transistors

Citations

WEB OF SCIENCE

13
Citations

SCOPUS

14

초록

This work proposes a pre-state-dependent ternary and binary logic inverter using a single-walled carbon nanotube (SWCNT)/indium oxide (InO) heterojunction field-effect transistor (H-FET) which is reliably formed by an inkjet printing method. The proposed device exhibits a logic-in-memory characteristic that operates in either ternary or binary mode depending on the previous output voltage state. Such previous state dependent ternary/binary operations are observed even after 4 days of exposure under ambient conditions and with 90 s of constant supply of bias stress.

키워드

Field effect transistors; Behavioral sciences; Ink jet printing; Transmission line measurements; Transient analysis; Substrates; Stress; Multi-valued logic; inverter circuit; inkjet printing; thin-film transistors; logic-in-memory
제목
Pre-State-Dependent Ternary/Binary Logic Operation Obtained by Inkjet Printed Indium Oxide and Single-Walled Carbon Nanotube/Indium Oxide Heterojunction-Based Transistors
저자
Kim, Somi; Jung, Seoyeon; Kim, Bongjun; Yoo, Hocheon
DOI
10.1109/LED.2022.3232805
발행일
2023-02
유형
Article
저널명
IEEE Electron Device Letters
권
44
호
2
페이지
265 ~ 268