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Influence of Si-In-Zn-O/Ag/Si-In-Zn-O Electrode on Amorphous Si-Zn-Sn-O Thin Film Transistors
- Hwang, Jin Young;
- Lee, Sang Yeol
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2초록
Amorphous SiZnSnO (a-SZTO) thin film transistors (TFTs) have been reported with transparent Si–In–Zn–O/Ag/Si–In–Zn–O (SIZO OMO) source/drain (S/D) electrodes. The characteristics of ITO and SIZO OMO electrodes were compared with conventional metal electrode of Ti/Al. The SZTO TFT with SIZO OMO electrode showed high field effect mobility of 17.69 cm2/Vs, threshold voltage of 4.05 V and low sub-threshold swing of 0.33 V/decade. The stability of a-SZTO TFTs with SIZO OMO electrode was measured ∆VTH = 1.4 V at 333 K, and − 20 V for 7200 s under negative bias temperature stress (NBTS). © 2021, The Author(s).
키워드
Amorphous oxide semiconductor; Oxide/Metal/Oxide; Thin film transistor; Transparent; Amorphous silicon; Electrodes; Silicon; Thin film circuits; Thin films; Threshold voltage; Amorphous Si; Conventional metals; High field effect mobility; Negative bias; Subthreshold swing; Thin-film transistor (TFTs); Thin film transistors
- 제목
- Influence of Si-In-Zn-O/Ag/Si-In-Zn-O Electrode on Amorphous Si-Zn-Sn-O Thin Film Transistors
- 저자
- Hwang, Jin Young; Lee, Sang Yeol
- 발행일
- 2021-02
- 유형
- Article
- 권
- 22
- 호
- 1
- 페이지
- 103 ~ 107
- 언어
- ENG
- 출판사
- Korean Institute of Electrical and Electronic Material Engineers
- 발행국가
- 미국
- 분량
- 5 페이지
- ISSN
- E 2092-7592
P 1229-7607