Spontaneous Multi-Interface Modulation for Enhancing Organic Transistor Performance via Self-Generated Molecular Interlayers

초록

The interfacial properties between source/drain electrodes and the active layer, as well as between the gate dielectric and the active layer, are critical determinants of the performance and operational stability of organic field-effect transistors (OFETs). Conventionally, engineering these interfaces requires multiple processing steps, thereby complicating and prolonging the overall manufacturing process. Herein, this study presents a strategy for the simultaneous engineering of both interfaces through the incorporation of self-assembling molecular additives into the active layer. By strategically selecting two additives with distinct chemical affinities for the electrode and gate dielectric surfaces, these additives spontaneously organize to form functional interlayers at their respective interfaces-the semiconductor-electrode and the semiconductor-gate dielectric interfaces-during a single processing step. This approach enables precise and concurrent modulation of multiple interfacial properties without additional processing steps. As a result, the dual-additive system yields more than a two-fold enhancement in field-effect mobility, accompanied by reductions in contact and channel resistances by factors of one-third and one-half, respectively, attributable to facilitated charge transport and reduced resistive losses at both interfaces. This strategy offers a cost-effective and streamlined route to fabricating high-performance and reliable OFETs by simplifying the fabrication process and eliminating the need for additional interface modification steps.

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