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Influence of Pd Doping on Electrical and Thermal Properties of n-Type Cu0.008Bi2Te2.7Se0.3 Alloys
- Kim, Se Yun;
- Kim, Hyun-Sik;
- Lee, Kyu Hyoung;
- Cho, Hyun-jun;
- Choo, Sung-sil;
- ... Lim, Jae-Hong;
- 외 8명
WEB OF SCIENCE
13SCOPUS
10초록
Doping is known as an effective way to modify both electrical and thermal transport properties of thermoelectric alloys to enhance their energy conversion efficiency. In this project, we report the effect of Pd doping on the electrical and thermal properties of n-type Cu0.008Bi2Te2.7Se0.3 alloys. Pd doping was found to increase the electrical conductivity along with the electron carrier concentration. As a result, the effective mass and power factors also increased upon the Pd doping. While the bipolar thermal conductivity was reduced with the Pd doping due to the increased carrier concentration, the contribution of Pd to point defect phonon scattering on the lattice thermal conductivity was found to be very small. Consequently, Pd doping resulted in an enhanced thermoelectric figure of merit, zT, at a high temperature, due to the enhanced power factor and the reduced bipolar thermal conductivity.
키워드
- 제목
- Influence of Pd Doping on Electrical and Thermal Properties of n-Type Cu0.008Bi2Te2.7Se0.3 Alloys
- 저자
- Kim, Se Yun; Kim, Hyun-Sik; Lee, Kyu Hyoung; Cho, Hyun-jun; Choo, Sung-sil; Hong, Seok-won; Oh, Yeseong; Yang, Yerim; Lee, Kimoon; Lim, Jae-Hong; Choi, Soon-Mok; Park, Hee Jung; Shin, Weon Ho; Kim, Sang-il
- 발행일
- 2019-12-02
- 유형
- Article
- 저널명
- Materials
- 권
- 12
- 호
- 24
- 언어
- ENG
- 출판사
- MDPI
- 발행국가
- 스위스
- ISSN
- E 1996-1944
P 1996-1944