Fine-Tuned V th for Logic Reconfigurability in Dual-Gate Zinc Oxynitride Transistors

초록

Dual-gate transistors enable tunable electrical behavior by introducing a second gate electrode, offering enhanced control over channel formation and threshold voltage (V th). Here, we report a dual-gate-controlled ZnON thin-film transistor (DGC-TFT) capable of finely modulating V th (Delta V = 0.34 to 0.54 V) through independent top and bottom gate inputs. By characterizing the transfer and output curves under various bias combinations, we reveal systematic V th shifts and dual-channel switching behavior arising from asymmetric gate dielectrics, organic parylene (top) and SiO2 (bottom). Finite-element TCAD simulations provide insights into the potential profiles, carrier distributions, and gate coupling mechanisms governing this behavior. Through this precise gate control, we demonstrate a dynamically tunable complementary inverter and implement five distinct logic functions (inverter, AND, OR, NAND, and NOR) using a single DGC-TFT device. These results highlight the promise of dual-gate architectures for compact, reconfigurable logic systems and adaptive circuit design.

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