Atmospheric Doping of Stretchable Polymer Semiconductors for Skin Electronics

초록

Despite the significant development of stretchable polymer semiconductors, the development of their doping systems remains an emerging challenge in the advancement of skin electronics. Here, an atmospheric doping system using ambient oxygen molecules in air as dopants for stretchable polymer semiconductors is introduced. The oxygen molecules, chemically adsorbed on the semiconductors, act as acceptors in a diffusion-controlled process influenced by oxygen partial pressure and humidity. The controlled atmospheric doping condition significantly increases the hole concentration of the semiconductors by two orders of magnitude (3.37 x 10(17) cm(-3)), which leads to enhanced transconductance, field-effect mobility, and on/off ratio of the organic transistors with superior air stability. Demonstrating the practical application of our approach, the essential elements of electronic circuits such as active-matrix arrays, inverters, and logic gates (NOR and NAND) with the atmospheric-doped stretchable polymer semiconductors, exhibiting excellent operational reliability under 30% biaxial strain is fabricated. This advancement marks a significant step toward the industrialization of high-performance skin electronics.

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