Modeling organic negative-transconductance transistors for circuit simulation

초록

Organic negative-transconductance (NTC) transistors are emerging as a new versatile element of flexible and printed electronics. However, there is no standard model of these transistors available in circuit simulators. This paper introduces the first current-voltage model for organic NTC transistors. The model reflects unique structural features of a state-of-the-art NTC transistor platform, incorporating a p-type, an n-type, and a back-conduction channel into a single heterojunction architecture. The details of modeling approach and development are systematically illustrated. Then, the model is firmly validated by experimental data from a high-performance device. Finally, controllability over the abruptness of inter-regime transitions is emphasized as a key advantage of the model for the accuracy of fitting results. This compact, closed-form, and analytical model covering all regimes of operation bridges the gap between device- and circuit-level perspective of organic NTC transistors, promoting their integration into practical electronics technologies.

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