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초록
In this study, aluminum-doped zinc oxide thin films are deposited on a glass substrate using a facing target sputtering system, as a function of film thickness and input power, to study their crystallographic, optical, and electrical properties at various sputtering conditions. X-ray crystallography results revealed a (002) peak at approximately 34° with the highest intensity. The 200 nm film deposited at 100 W exhibited high crystallinity, the highest transmittance (92%), and lowest resistivity (1.4 × 10−3 Ω cm). © 2020 Elsevier B.V.
키워드
Aluminum-doped zinc oxide; Facing target sputtering system; Thin film; Transparent conductivity oxide; Aluminum coatings; Aluminum oxide; Crystallinity; Facings; II-VI semiconductors; Optical films; Sputtering; Substrates; Transparent conducting oxides; X ray crystallography; Zinc oxide; Aluminum-doped zinc oxide; Aluminum-doped zinc oxide thin films; Facing target sputtering; Glass substrates; High crystallinity; Input power; Sputtering conditions; Transparent conductivity; Thin films
- 제목
- Influence of sputtering conditions on the properties of aluminum-doped zinc oxide thin film fabricated using a facing target sputtering system
- 저자
- Lee M.; Park Y.; Kim K.; Hong J.
- 발행일
- 2020-06
- 유형
- Article
- 저널명
- Thin Solid Films
- 권
- 703
- 언어
- ENG
- 출판사
- Elsevier B.V.
- 발행국가
- 스위스
- ISSN
- P 0040-6090