Protocol for lateral patterning of van der Waals heterostructures using sequential chemical vapor deposition

초록

Previous work demonstrates that scalable area-selective deposition of van der Waals monolayers enables tunable design of atomically thin electronic and photonic platforms. Here, we present a protocol for lateral patterning of MoS2-WS2 heterostructures using sequential chemical vapor deposition. We describe steps for constructing patterned lateral heterostructures with alternating channels from nanometers to micrometers. This protocol has potential application in next-generation atomically thin electronic circuits. For complete details on the use and execution of this protocol, please refer to Lee et al.1

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