Investigation of optoelectronic and thermoelectric characteristics of Tl2Os (Cl/Br)6 double perovskites for renewable energy applications

  • Mustafa, Ghulam M.
  • Younas, Bisma
  • Waseem, Muhammad
  • Ateeq-ur-Rehman
  • Noor, N. A.
  • ... Mumtaz, Sohail
  • 외 1명
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초록

Half-metallicity is a promising feature for burgeoning spintronic devices, prompting investigators to explore suitable materials for advancing existing technology. This study delves into the impact of Os d-electrons on the half-metallic ferromagnetic behavior of double perovskites with composition Tl2Os (Cl/Br)6, aiming to elucidate their potential for spintronic devices. The structural, electronic, magnetic, and transport responses are comprehensively investigated utilizing the WIEN2k package. The incorporation of Br at Cl site causes the expansion of unit cell from 9.80 to 10.37 & Aring;, reduction of bulk modulus from 50.27 to 41.38 GPa, and formation energy of-9.33 and-7.89 eV for Tl2OsCl6 and Tl2OsBr6, respectively. The high Curie temperature of 552 and 518 K witness their above-room-temperature viability for device fabrication. Insights into half-metallicity are established from band structures and DOS analysis. The phenomenon of half-metallic ferromagnetism is elucidated through exchange constants and a double exchange mechanism. Furthermore, various thermoelectric performance parameters, including electrical conductivity (sigma), thermal conductivity due to electron (kappa e), the seeback coefficient (S), susceptibility (chi), power factor (PF), and figure of merit (ZT) are meticulously calculated. This comprehensive exploration sheds light on the potential of Tl2Os(Cl/Br)6 for spintronic applications, underscoring their utilization in emerging technologies.

키워드

SpintronicsHalf metallicityElectronic propertiesMagnetic propertiesFigure of meritELECTRONIC-STRUCTURESPINTRONICSTRANSITION
제목
Investigation of optoelectronic and thermoelectric characteristics of Tl2Os (Cl/Br)6 double perovskites for renewable energy applications
저자
Mustafa, Ghulam M.Younas, BismaWaseem, MuhammadAteeq-ur-RehmanNoor, N. A.Elhindi, Khalid M.Mumtaz, Sohail
DOI
10.1016/j.mssp.2025.109420
발행일
2025-06
유형
Article
저널명
Materials Science in Semiconductor Processing
192