UV-curable resin-induced transition to interface-type resistive switching in ZnO synaptic devices for neuromorphic computing

초록

Zinc oxide (ZnO) is a widely utilized semiconductor in optoelectronic and resistive switching (RS) devices due to its excellent electronic properties and processability. Building on recent advances in quantum dot light-emitting diodes (QLEDs), where UV-curable encapsulants induce positive aging effects via interfacial reactions with ZnO, this concept is introduced into ZnO-based RS devices for the first time. This approach highlights a practical pathway toward low-power, energy-efficient neuromorphic computing. Upon resin treatment, a distinct transition from abrupt, filament-type switching to gradual, analog-like interface-type switching is observed-an advantageous mode for low-power neuromorphic applications requiring progressive conductance modulation. Through in-depth chemical and structural analyses, we identify the diffusion of resin-derived species into the ZnO layer, leading to oxygen vacancy passivation and carbonate formation. This transformation suppresses vacancy-driven variability and stabilizes device operation. The enhanced neuromorphic performance is further validated through integration into multilayer perceptron (MLP) and convolutional neural network (CNN) architectures for Modified National Institute of Standards and Technology (MNIST) and American Sign Language (ASL) recognition tasks, where resin-treated devices outperform their pristine counterparts. This interdisciplinary study not only introduces a novel application of resin-induced positive aging but also offers valuable insights into the design of stable oxide-based electronics and neuromorphic systems.

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