OLED의 Thin Film Encapsulation을 위한 MgO 박막의 원자층 증착 장치 및 공정에 관한 연구

초록

Thin-film encapsulation (TFE) technology is most effective in preventing water vapor and oxygen permeation in the organic light emitting diodes (OLED). Of those, a laminated structure of Al2O3 and MgO were applied to provide efficient barrier performance for increasing the stability of devices in air. Atomic layer deposition (ALD) method is known as the most promising technology for making the laminated Al2O3/MgO and is used to realize a thin film encapsulation technology in organic light-emitting diodes. Atomic layer deposited inorganic films have superior barrier performance and have advantages of excellent uniformity over large scales at relatively low deposition temperatures. In this study, the control system of the MgCP2 precursor for the atomic layer deposition of MgO was established in order to deposit the MgO layer stably by the injection time of second level and the stable heating temperature. The deposition rate was obtained stably to be from 4 to 10 Å/cycle using the injection pulse times ranging from 3 to 12 sec and a substrate temperature ranging from 80 to 150 C.

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