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Optimization of Feedback FET with Asymmetric Source Drain Doping Profile
- Lee, Inyoung;
- Park, Hyojin;
- Nguyen, Quan The;
- Kim, Garam;
- Cho, Seong Jae;
- 외 1명
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2초록
A feedback field-effect transistor (FBFET) is a novel device that uses a positive feedback mechanism. FBFET has a high on-/off ratio and is expected to realize ideal switching characteristics through steep changes from off-state to on-state. In this paper, we propose and optimize FBFET devices with asymmetric source/drain doping concentrations. Additionally, we discuss the changes in electrical characteristics across various channel length and channel thickness conditions and compare them with those of FBFET with a symmetric source/drain. This shows that FBFET with an asymmetric source/drain has a higher on-/off ratio than FBFET with a symmetric source/drain.
키워드
feedback field-effect transistor (FBFET); device optimization; on-off current ratio; subthreshold swing; TCAD; NEGATIVE CAPACITANCE; DEVICE; DESIGN; PERSPECTIVES; MOS
- 제목
- Optimization of Feedback FET with Asymmetric Source Drain Doping Profile
- 저자
- Lee, Inyoung; Park, Hyojin; Nguyen, Quan The; Kim, Garam; Cho, Seong Jae; Cho, Ilhwan
- 발행일
- 2022-04
- 유형
- Article
- 저널명
- Micromachines
- 권
- 13
- 호
- 4
- 언어
- ENG
- 출판사
- MDPI
- 발행국가
- 스위스
- ISSN
- E 2072-666X
P 2072-666X