High-Performance Amorphous InGaSnO Thin-Film Transistor with ZrAlOx Gate Insulator by Spray Pyrolysis

초록

Here, we report the high-performance amorphous gallium indium tin oxide (a-IGTO) thin-film transistor (TFT) with zirconium aluminum oxide (ZAO) gate insulator by spray pyrolysis. The Ga ratio in the IGTO precursor solution varied up to 20%. The spray pyrolyzed a-IGTO with a high-k ZAO gate insulator (GI) exhibits the field-effect mobility (mu(FE)) of 16 cm(2)V(-1)s(-1), threshold voltage (V-TH) of -0.45 V subthreshold swing (SS) of 133 mV/dec., and ON/OFF current ratio of similar to 10(8). The optimal a-IGTO TFT shows excellent stability under positive-bias-temperature stress (PBTS) with a small Delta V-TH shift of 0.35 V. The enhancements are due to the high film quality and fewer interfacial traps at the a-IGTO/ZAO interface. Therefore, the spray pyrolyzed a-IGTO TFT can be a promising candidate for flexible TFT in the next-generation display.

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