A Quantum-Well Charge-Trap Synaptic Transistor with Highly Linear Weight Tunability

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초록

In this work, a novel synaptic transistor has been proposed and analyzed through technology computer-aided design (TCAD) simulation. The proposed device has merits of full-Si processing compatibility, short-and long-term plasticity, high energy efficiency, and linear and symmetric conductance adjustability. The proposed device consists of a quantum-well structure and a charge-trap unit for realizing both short-and long-term memories, respectively. The quantum-well charge-trap synaptic transistor (QW CTS) employs two independent gates to separate inference and weight adjustment operation. An optimally designed and validated QW CTS has demonstrated a highly linear and symmetric weight tunability, with an ultra-low energy consumption of 1.5 fJ per synaptic event. The QW CTS can be a core element in the hardware-driven Si neuromorphic system. CCBY

키워드

energy efficiency; hardware-driven neuromorphic system.; linear weight tunability; Logic gates; long-term plasticity (LTP); Mathematical model; Neuromorphics; quantum-well charge-trap synaptic transistor; short-term plasticity (STP); Si-processing compatibility; Silicon; Silicon germanium; Transistors; Tunneling; Charge trapping; Electronic design automation; Energy efficiency; Energy utilization; Silicon; Adjustability; High energy efficiency; Long term memory; Neuromorphic systems; Quantum well structures; Synaptic events; Technology computer aided design; Ultra low energy; Semiconductor quantum wells
제목
A Quantum-Well Charge-Trap Synaptic Transistor with Highly Linear Weight Tunability
저자
Yu, E.; Cho, S.; Roy, K.; Park, B.
DOI
10.1109/JEDS.2020.3011409
발행일
2020-07
유형
Article
저널명
IEEE Journal of the Electron Devices Society
권
8
페이지
836 ~ 840