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Improved carrier transport properties by I-doping in n-type Cu0.008Bi2Te2.7Se0.3 thermoelectric alloys
- Lee K.H.;
- Kim H.-S.;
- Choo S.-S.;
- Shin W.H.;
- Lim J.-H.;
- 외 2명
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13초록
The addition of Cu becomes essential in polycrystalline n-type Bi2(Te,Se)3-based alloys since it is known to enhance stability of carrier transport properties as well as thermoelectric performance. However, a way to further optimize is necessary owing to the limited controllability of transport parameters by Cu addition. Herein, we present improved carrier transport properties via I-doping in Cu0.008Bi2Te2.7Se0.3. Weighted mobility and effective mass are increased simultaneously by small amount doping of I at Te/Se-site. As a result, ~15% increased power factor and high average thermoelectric figure of merit (zT) of 0.79 were obtained in a wide temperature range. © 2020
키워드
Bi2(Te,Se)3; Effective mass; Iodine; Thermoelectric; Weighted mobility; Carrier transport; Thermoelectricity; Effective mass; Polycrystalline; Power factors; Thermoelectric alloys; Thermoelectric figure of merit; Thermoelectric performance; Transport parameters; Wide temperature ranges; Transport properties
- 제목
- Improved carrier transport properties by I-doping in n-type Cu0.008Bi2Te2.7Se0.3 thermoelectric alloys
- 저자
- Lee K.H.; Kim H.-S.; Choo S.-S.; Shin W.H.; Lim J.-H.; Kim S.W.; Kim S.-I.
- 발행일
- 2020-09
- 유형
- Article
- 권
- 186
- 페이지
- 357 ~ 361
- 언어
- ENG
- 출판사
- Acta Materialia Inc
- 발행국가
- 영국
- 분량
- 5 페이지
- ISSN
- P 1359-6462