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초록
In this study, copper oxide thin films were fabricated by facing target sputtering system and their structural, optical, and electrical properties were investigated. Crystal phase of samples were changed by variation of oxygen flow rate from Cu to Cu2O and CuO. Compared to Cu metal film, electrical properties of Cu2O and CuO were relatively degraded, however, asfabricated Cu2O and CuO indicated still low resistivity (~10-3 Ω·cm) and high carrier concentration (~1019 cm-3). From the results, it is thought that the copper oxide thin films Cu2O fabricated under optimal conditions can be applied to various optoelectronic devices including ultraviolet photodetector.
키워드
Cu2O; CuO; FTS; Heterojunction
- 제목
- FTS 시스템으로 제작한 Cu2O/CuO 박막의 산소 유량비에 따른 특성 평가
- 제목 (타언어)
- Characteristic of Cu2O/CuO Thin Films Fabricated by FTS System Based on Oxygen Flow Ratio
- 저자
- 김수지; 김지형; 김경환; 홍정수
- 발행일
- 2025-03
- 저널명
- 전기전자재료학회논문지
- 권
- 38
- 호
- 2
- 페이지
- 193 ~ 199