Effect of surface treated amorphous Si-Zn-Sn-O on the electrical properties of thin film transistors by Ar plasma treatment

초록

Control of surface properties has been investigated by using Ar plasma treatment on amorphous Si-Zn-Sn-O (a-SZTO) thin film. Various Ar plasma powers were used to verify the effect of plasma treatment of the a-SZTO thin film surface on the characteristics of a-SZTO TFT. As the Ar plasma power increased, the threshold voltage of a-SZTO thin film transistors (TFTs) shifted to negative value and the on-current increased. In addition, the mobility in the plasma treated TFT device showed improvement compared with that of untreated one. The improvement in the mobility can be attributed to the generation of oxygen vacancy (VO) caused by collision of Ar ions during plasma treatment. Increasing power of Ar plasma leads to increase in VO, resulting in a higher carrier concentration. Additionally, atomic force microscope analysis was also conducted to examine the effect of plasma treatment on the change of the roughness of the thin film.

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