Emulation of synaptic functions with low voltage organic memtransistor for hardware oriented neuromorphic computing

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62
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53

초록

Here, various synaptic functions and neural network simulation based pattern-recognition using novel, solution-processed organic memtransistors (memTs) with an unconventional redox-gating mechanism are demonstrated. Our synaptic memT device using conjugated polymer thin-film and redox-active solid electrolyte as the gate dielectric can be routinely operated at gate voltages (VGS) below − 1.5 V, subthreshold-swings (S) smaller than 120 mV/dec, and ON/OFF current ratio larger than 108. Large hysteresis in transfer curves depicts the signature of non-volatile resistive switching (RS) property with ON/OFF ratio as high as 105. In addition, our memT device also shows many synaptic functions, including the availability of many conducting-states (> 500) that are used for efficient pattern recognition using the simplest neural network simulation model with training and test accuracy higher than 90%. Overall, the presented approach opens a new and promising way to fabricate high-performance artificial synapses and their arrays for the implementation of hardware-oriented neural network. © 2022, The Author(s).

키워드

MEMORY; PLASTICITY; DEVICE; TRANSISTOR
제목
Emulation of synaptic functions with low voltage organic memtransistor for hardware oriented neuromorphic computing
저자
Sagar, S.; Udaya, Mohanan K.; Cho, Seongjae; Majewski, L.A.; Das, B.C.
DOI
10.1038/s41598-022-07505-9
발행일
2022-03-09
유형
Article
저널명
Scientific Reports
권
12
호
1