High-Performance Self-Powered Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction with High Responsivity and Selectivity

초록

A high-performance self-powered deep ultraviolet (DUV) photodetector based on the NiO/beta-Ga2O3 heterojunction is fabricated and analyzed. The NiO/beta-Ga2O3 heterojunction photodetectors are fabricated both with and without a post-annealing process following NiO film deposition. Each photodetector structure is investigated through technology computer-aided design simulations, including energy band diagram, trap density, and carrier concentration. The pristine self-powered NiO/beta-Ga2O3 photodetector, lacking a post-annealing process, exhibits partial Schottky contact formation between metal and NiO film, leading to performance degradation, including reduced responsivity, detectivity, and response time. On the other hand, the post-annealed self-powered NiO/beta-Ga2O3 photodetector demonstrates high performance such as a responsivity of 592.0 mA W-1, a detectivity of 4.30 x 10(12) Jones, and response times of 30.93 ms and 72.32 ms, respectively. Therefore, the fabricated NiO/beta-Ga2O3 photodetector shows a promising potential for various applications requiring DUV detection without an external voltage bias.

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