Thermally stable photosensing using poly(methyl methacrylate)-coated MoS2 phototransistor for improved imaging reliability

초록

In this paper, we report thermally stable photosensing using MoS2 phototransistor with a poly(methyl methacrylate) (PMMA) coating. The increase in the OFF current of the PMMA-coated MoS2 phototransistor degraded to less than 87.72% of that of the pristine MoS2 phototransistor under harsh temperature conditions (250 °C). PMMA coating on the pristine MoS2 phototransistor improved the photosensitivity and drain current stability as a function of time by 315.71% at 250 °C and 91.26% under intense negative bias temperature illumination stress (NBTIS) test (V gs = −30 V, V ds = 10 V, λ ex = 638 nm, P inc = 1.0 mW, and T = 250 °C), respectively. This simple and useful method provides valuable insight for improving the reliability of photodetectors and image sensor systems under harsh temperature. © 2024 IOP Publishing Ltd.

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