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Ab Initio Calculation of Effective Density of States of GeSn and Its Application to Evaluate the Current Drivability of Tunneling Field-Effect Transistor with GeSn Source Junction
- 제목
- Ab Initio Calculation of Effective Density of States of GeSn and Its Application to Evaluate the Current Drivability of Tunneling Field-Effect Transistor with GeSn Source Junction
- 저자
- 조성재
- 발행일
- 2016-07-06
- 학회명
- 2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)
- 개최지
- Hakodate, Japan
- 개최국가
- 일본
- 학회 개최일
- 2016-07-04 ~ 2016-07-06