Solid-phase epitaxy of a CuAlO2 template on c-Al2O3 for delafossite growth

초록

Thin-film growth of ABO(2) delafossites has recently attracted significant attention due to its attractive transport properties and potential applications. A fundamental requirement for achieving high-quality thin films is the availability of lattice matching substrates and chemical compatibility. However, there are still many obstacles to achieving high-quality thin films. Here, we report a process to further engineer a template ABO(2) delafossite structure by solid-phase epitaxy of CuAlO2 on the surface of a commercial sapphire substrate, which offers a promising route to growing high-quality epitaxial thin films. The starting reagents involve a layer of polycrystalline Cu2O deposited on a c-Al2O3 substrate by pulsed laser deposition (PLD). Subsequent thermal treatment activates a solid-state interface reaction between the film and substrate, producing a CuAlO2 thin film. The reaction temperature and dwell time parameters were optimized in this study to prepare a phase diagram for CuAlO2 samples without phase impurities. This method provides an essential stepping-stone toward the approachability of a lattice matching template (i.e., substrate-buffer layer) for ABO(2) heterostructures. An example of successful epitaxial growth of highly conducting PdCrO2 is also demonstrated by using a CuAlO2 buffer layer. (C) 2022 Author(s).All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY)license (http://creativecommons.org/licenses/by/4.0/).

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