Reconfigurable skin electronics enabled by intrinsically stretchable photoelectric memory transistors

초록

Skin electronics requires devices that are both mechanically compliant and computationally versatile, integrating sensing, storage, and logic within soft form factors. Here, we report intrinsically stretchable photoelectric memory transistors that combine non-volatile data storage with optoelectrically reconfigurable logic-in-memory functionality. The devices consist of a nanoconfined polymer semiconductor embedded in an elastomer matrix and a maleic anhydride-functionalized dielectric that also serves as a charge-trapping layer. Programming is achieved with visible light under positive gate bias and erasing with ultraviolet light under negative bias, enabling reversible, multi-level optical programmability. These transistors maintain stable operation under 30% biaxial strain and 1,000 mechanical cycles, with robust retention (10(7) s) and endurance (103 cycles). At the single-transistor level, they define always-open ('1') and always-closed ('0') states that can be reconfigured into diverse logic gates. Finally, we demonstrate wafer-scale integration of various reconfigurable logic-in-memory architectures on a 4-inch elastomeric substrate, establishing a system-level platform that parallels field-programmable gate arrays in a fully stretchable form factor for adaptive and intelligent skin electronics that co-localize data storage and computation.

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