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Accurate Design of Si-Compatible Tunneling Field-Effect Transistor with GeSn Source Junction by Ab Initio Calculation and Device Simulation
- 제목
- Accurate Design of Si-Compatible Tunneling Field-Effect Transistor with GeSn Source Junction by Ab Initio Calculation and Device Simulation
- 저자
- 조성재
- 발행일
- 2016-09-28
- 학회명
- 2016 International Conference on Solid State Devices and Materials (SSDM)
- 개최지
- Tsukuba, Japan
- 개최국가
- 일본
- 학회 개최일
- 2016-09-26 ~ 2016-09-29