Cl2 가스를 이용한 사파이어 기판의 반응성 이온 에치 특성

초록

For the microfabrication of sapphires glass, BCl3 gas has been mainly used in dry etching process. In this study, instead of the toxic BCl3, Cl2 gas was used in the dry etching of C-plane (0001) sapphire glass substrate in Reactive Ion Etch (RIE) equipment. During RIE process, Ar gas was added as a nonreactive gas to increase the probability of heavy ion collision. At different reactive frequency (RF) power, etching time, gas sccm, and Cl2/Ar gas ratio, RIE was carried out on sapphire glass and the etching rate and the surface roughness was measured and compared. The etching thickness and rate of sapphire glass according to the Ar/Cl2 gas ratio. The highest etching rate was obtained when the Ar gas ratio was 40 %. The surface roughness was measured through atomic force microscopy (AFM) analysis and the process condition with an Ar gas ratio of 40 % also showed the highest Ra values and etch rate. For various gas and plasma conditions, the Cl2 RIE process of sapphires glass is being analyzed and optimized.

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