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Energies
ISSN
P 1996-1073
출판사
Multidisciplinary Digital Publishing Institute (MDPI)
국가
SWITZERLAND
발행 상태
활성
데이터베이스 수록 정보
DOAJ 2017-2021 (5년)
JCR 2010-2019 (10년)
SCIE 2010-2021 (12년)
Scopus 2017-2020 (4년)
SJR 2010-2019 (10년)
전체 9건 중 1번부터 9번까지의 결과를 표시합니다.
2026
Article
Analysis of spatial distribution of remnant polarization in inverted staggered a-IGZO/HZO ferroelectric thin-film transistor using capacitance-voltage characteristics
- Kim, Hwan Jin ;
- Yang, Hyojin ;
- Kim, Haesung ;
- Park, Sejun ;
- Lee, Ha-Neul ;
- ... Park, Min-Kyu ;
- 외 4명
- 2026-08
- Solid-State Electronics
- PERGAMON-ELSEVIER SCIENCE LTD
2025
Article
Analysis of operation delay and switching speed limitation due to source/drain resistance and subgap density of states in amorphous InGaZnOx/HfZrOx ferroelectric thin-film transistor
- Park, Sejun ;
- Yang, Hyojin ;
- Kim, Haesung ;
- Jeong, Hyunwook ;
- Choi, Sung-Jin ;
- ... Park, Min-Kyu ;
- 외 3명
- 2025-11
- Solid-State Electronics
- Elsevier Ltd
2024
Article
Enhancement in electrical properties of dual-active-layer amorphous SiZnSnO/SiInZnO thin film transistors
- 2024-08
- Solid-State Electronics
- PERGAMON-ELSEVIER SCIENCE LTD
2023
Article
Influence of metal capping thin film transistor with different Si concentration in ZnSnO
- Lee, Ji Ye ;
- Ju, Byeong-Kwon ;
- Lee, Sang Yeol
- 2023-08
- Solid-State Electronics
- PERGAMON-ELSEVIER SCIENCE LTD
Article
Electron conduction mechanisms in magnetic tunnel junctions fabricated using amorphous Si-Zn-Sn-O as a low-resistive semiconducting barrier
- 2023-06
- Solid-State Electronics
- PERGAMON-ELSEVIER SCIENCE LTD
Article
Electrical instabilities in amorphous Si-Zn-sn-O thin film transistors under ultra-violet irradiation depending on oxygen content
- 2023-02
- Solid-State Electronics
- PERGAMON-ELSEVIER SCIENCE LTD
2022
Article
Frequency doubler based on unipolar thin-film-transistor technologies
- Ko, Eun-Hye ;
- Kim, Chang-Hyun
- 2022-03
- Solid-State Electronics
- PERGAMON-ELSEVIER SCIENCE LTD
Article
Influence of sub-band gap density of states on the electrical performance of amorphous SiZnSnO thin film transistor
- 2022-02
- Solid-State Electronics
- PERGAMON-ELSEVIER SCIENCE LTD
2020
Article
Investigation of electrical characteristics of flexible CMOS devices fabricated with thickness-controlled spalling process
- Park, H. ;
- Lim, C. ;
- Noh, Y. ;
- Lee, C.-J. ;
- Won, H. ;
- ... Yoo, H. ;
- 외 4명
- 2020-11
- Solid-State Electronics
- PERGAMON-ELSEVIER SCIENCE LTD