조성재

전체 121건 중 61번부터 70번까지의 결과를 표시합니다.

2016

Conference

Growth of polycrystalline Ge on Si by using low-temperature processes

조성재

2016-02-24
대한민국

Conference

First-principle study of GeSn alloys for electrical and optical characterizations

조성재

2016-02-24
대한민국

Conference

Ge-on-Si microdisk resonator with enhanced optical confinement by SiNx stressor for Si electronic and photonic integrated system

조성재

2016-02-24
대한민국

Conference

Thyristor technology for ultra-sharp-switching logic and capacitorless dynamic random-access memory (DRAM) applications

조성재

2016-02-23
대한민국

Conference

Highly accurate circuit-level macro modeling of charge-trap flash memory

조성재

2016-02-23
대한민국

Conference

Si CMOS extension and Ge technology perspectives forecase through metal-oxide-semiconductor junctionless field-effect transistor

조성재

2016-02-23
대한민국

Conference

Nanowire PMOSFET having Si core and ultra-thin Ge peripheral channel

조성재

2016-02-23
대한민국

Conference

Optimal design of 10-nm junctionless field-effect transistor with poly-Si channel in consideration of quantum-mechanical drift-diffusion models

조성재

2016-02-23
대한민국

Conference

Characterization of GeSn deposited on Si by low-temperature sputter epitaxy

조성재

2016-02-23
대한민국

Conference

Circuit-level simulation of RRAM cross-point array based on a reliable device-level compact modeling

조성재

2016-02-23
대한민국

처음 이전 678 9 10 다음 끝

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자료 필터

자료유형

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키워드

언어

Growth of polycrystalline Ge on Si by using low-temperature processes

First-principle study of GeSn alloys for electrical and optical characterizations

Ge-on-Si microdisk resonator with enhanced optical confinement by SiNx stressor for Si electronic and photonic integrated system

Thyristor technology for ultra-sharp-switching logic and capacitorless dynamic random-access memory (DRAM) applications

Highly accurate circuit-level macro modeling of charge-trap flash memory

Si CMOS extension and Ge technology perspectives forecase through metal-oxide-semiconductor junctionless field-effect transistor

Nanowire PMOSFET having Si core and ultra-thin Ge peripheral channel

Optimal design of 10-nm junctionless field-effect transistor with poly-Si channel in consideration of quantum-mechanical drift-diffusion models

Characterization of GeSn deposited on Si by low-temperature sputter epitaxy

Circuit-level simulation of RRAM cross-point array based on a reliable device-level compact modeling